MOCVD growth of AlGaN UV LEDs | Zendy

Jung Han | Zendy; Mary H. Crawford | Zendy

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MOCVD growth of AlGaN UV LEDs

Author(s) -

Jung Han,

Mary H. Crawford

Publication year - 1998

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/658459

Subject(s) - metalorganic vapour phase epitaxy , materials science , light emitting diode , indium , optoelectronics , diode , torr , gas phase , indium gallium nitride , gallium nitride , phase (matter) , epitaxy , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , thermodynamics

Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode

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