Open AccessCharacterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology
Author(s) -
N Kotera,
K. Tanaka,
H Arimoto,
Nami Miura,
E. D. Jones,
Tomoyoshi Mishima,
M. Washima
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/658404
Subject(s) - cyclotron resonance , effective mass (spring–mass system) , quantum well , cyclotron , perpendicular , condensed matter physics , electron , crystal (programming language) , molecular beam epitaxy , conduction band , doping , infrared , materials science , chemistry , optoelectronics , physics , optics , laser , epitaxy , nanotechnology , geometry , mathematics , quantum mechanics , computer science , programming language , layer (electronics)
Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type-modulation-doped InGaAs/InAlAs multiquantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 {times} 10{sup 12} cm{sup {minus}2} per one quantum well were prepared by MBE. Double-crystal X-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50% bigger than the band edge mass of 0.041m{sub 0}, were measured by far-infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two-dimensional subband structure was quite different from conduction-band effective mass in a direction perpendicular to the same quantum well and from GaAs/GaAlAs quantum well system