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Electronic processes in thin-film PV materials. Final report
Author(s) -
P. C. Taylor,
D. Chen,
S.L. Chen
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/656705
Subject(s) - dangling bond , materials science , silicon , thin film , amorphous silicon , metastability , excitation , excited state , spectroscopy , resonance (particle physics) , electron paramagnetic resonance , hydrogen , atomic physics , crystalline silicon , optoelectronics , nuclear magnetic resonance , chemistry , nanotechnology , physics , organic chemistry , quantum mechanics
The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR

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