Thin teflon-like films for MEMS: Film properties and reliability studies
Author(s) -
B.K. Smith,
Glen LaVigne,
J.J. Sniegowski,
C. Nacaya Brown
Publication year - 1998
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/656699
Subject(s) - materials science , x ray photoelectron spectroscopy , fourier transform infrared spectroscopy , thin film , analytical chemistry (journal) , diffusion , contact angle , composite material , microelectromechanical systems , deposition (geology) , refractive index , optics , chemical engineering , nanotechnology , optoelectronics , chemistry , chromatography , paleontology , physics , engineering , sediment , biology , thermodynamics
This work presents film properties and initial reliability studies for thin Teflon-like films applied to a unique test vehicle, the Sandia-designed and fabricated microengine. Results on microengines coated with the film show a factor of three improvement in their lifetime and an order of magnitude reduction in the coefficient of friction when compared to uncoated samples. Coefficients Of Friction (COF) of 0.07 for the Teflon-like film and 1.0 for uncoated samples are extracted from models which match the measured behavior of working microengines. These films, deposited form a plasma source, exhibit the ability to penetrate into very narrow, deep channels common to many MEMS devices. For as-deposited film, both the refractive index at 1.4 and the contact angle with water at 108{degree} show the film to be very similar to bulk Teflon PTFE. Film stability as a function of temperature has been examined using Fourier Transformation Infrared (FTIR) spectroscopy. The film structure as observed by the fluorine-carbon (F-C) peak is stable up to 200 C, but starts decomposing above 250 C. Film composition has been examined using X-ray photoelectron spectroscopy (XPS) and is quite different for directly exposed surfaces compared with deep, narrow channels where the deposition process is diffusion limited
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