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Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Quarterly technical progress report, October 1-December 31, 1979
Author(s) -
William Paul
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6518418
Subject(s) - pseudogap , silicon , substrate (aquarium) , amorphous solid , amorphous silicon , field (mathematics) , analytical chemistry (journal) , field effect , insulator (electricity) , materials science , condensed matter physics , chemistry , physics , optoelectronics , crystalline silicon , environmental chemistry , superconductivity , crystallography , mathematics , cuprate , oceanography , geology , pure mathematics

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