Open AccessBoron-enhanced diffusion of boron from ultralow-energy boron implantation
Author(s) -
Aditya Agarwal,
D. J. Eaglesham,
H.J. Gossmann,
Lourdes Pelaz,
S. B. Herner,
D.C. Jacobson,
T. E. Haynes,
Yu. E. Erokhin
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/650277
Subject(s) - boron , diffusion , silicon , thermal diffusivity , materials science , analytical chemistry (journal) , amorphous solid , boro , crystallite , layer (electronics) , polycrystalline silicon , radiochemistry , chemistry , crystallography , metallurgy , nanotechnology , thermodynamics , physics , organic chemistry , thin film transistor , chromatography
The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B{sup +}, the threshold implantation dose which leads to BED lies between 3 {times} 10{sup 14} and of 1 {times} 10{sup 15}/cm{sup {minus}2}. Formation of the shallowest possible junctions by 0.5 keV B{sup +} requires that the implant dose be kept lower than this threshold