The effects of irradiation and proton implantation on the density of mobile protons in SiO{sub 2} films | Zendy

K. Vanheusden | Zendy; D.M. Fleetwood | Zendy; J.R. Schwank | Zendy; M.R. Shaneyfelt | Zendy; T.L. Meisenheimer | Zendy; B.L. Draper | Zendy

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The effects of irradiation and proton implantation on the density of mobile protons in SiO{sub 2} films

Author(s) -

K. Vanheusden,

D.M. Fleetwood,

J.R. Schwank,

M.R. Shaneyfelt,

T.L. Meisenheimer,

B.L. Draper

Publication year - 1998

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/645601

Subject(s) - proton , irradiation , radiation , electron , materials science , radiation hardening , oxide , radiation damage , atomic physics , physics , nuclear physics , metallurgy

Proton implantation into the buried oxide of Si/SiO{sub 2}/Si structures does not introduce mobile protons. The cross section for capture of radiation-induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. The data provide new insights into the atomic mechanisms governing the generation and radiation tolerance of mobile protons in SiO{sub 2}. This can lead to improved techniques for production and radiation hardening of radiation tolerant memory devices

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