Open AccessPoint-defect annealing mechanism for Stage III recovery in irradiated or quenched tungsten. [Electron irradiation]
Author(s) -
D. N. Seidman
Publication year - 1978
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6430507
Subject(s) - irradiation , tungsten , electron beam processing , annealing (glass) , vacancy defect , field ion microscope , materials science , electron , crystallographic defect , ion , electron microscope , atom (system on chip) , atomic physics , molecular physics , radiochemistry , chemistry , crystallography , metallurgy , optics , nuclear physics , physics , computer science , organic chemistry , embedded system
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom