z-logo
open-access-imgOpen Access
Development of a polysilicon process based on chemical vapor deposition (Phase 1). Fifth quarterly progress report, 1 October-31 December 1980
Author(s) -
J. R. McCormick,
Kenneth G. Sharp,
A. Arvidson,
D. Sawyer
Publication year - 1981
Language(s) - English
Resource type - Reports
DOI - 10.2172/6428678
Subject(s) - trichlorosilane , dichlorosilane , polycrystalline silicon , chemical vapor deposition , materials science , silicon , process engineering , hydrogen , chemical engineering , chemistry , nanotechnology , engineering , optoelectronics , organic chemistry , layer (electronics) , thin film transistor

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom