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Model for hydrogen isotope backscattering, trapping and depth profiles in C and a-Si
Author(s) -
S. Cohen,
G.M. McCracken
Publication year - 1979
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6416298
Subject(s) - trapping , hydrogen , atomic physics , silicon , tokamak , ion , isotope , yield (engineering) , carbon fibers , plasma , energy (signal processing) , hydrogen isotope , isotopes of silicon , computational physics , materials science , physics , nuclear physics , nuclear reaction , deuterium , ecology , quantum mechanics , composite number , metallurgy , composite material , biology

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