Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Quarterly technical progress report, January-March 31, 1980
Author(s) -
W. Paul
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6379217
Subject(s) - analytical chemistry (journal) , silicon , voltage , amorphous silicon , semiconductor , amorphous solid , computational physics , plasma , band gap , chemistry , atomic physics , materials science , condensed matter physics , physics , optoelectronics , quantum mechanics , crystallography , crystalline silicon , chromatography
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