z-logo
open-access-imgOpen Access
Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Quarterly technical progress report, January-March 31, 1980
Author(s) -
W. Paul
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6379217
Subject(s) - analytical chemistry (journal) , silicon , voltage , amorphous silicon , semiconductor , amorphous solid , computational physics , plasma , band gap , chemistry , atomic physics , materials science , condensed matter physics , physics , optoelectronics , quantum mechanics , crystallography , crystalline silicon , chromatography

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom