Open AccessTransient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors
Author(s) -
N. M. Haegel
Publication year - 1985
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6308564
Subject(s) - responsivity , germanium , infrared , photon , transient (computer programming) , materials science , hydrogen , acceptor , photoconductivity , optoelectronics , physics , photodetector , analytical chemistry (journal) , chemistry , condensed matter physics , optics , silicon , chromatography , quantum mechanics , computer science , operating system
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom