Open AccessCoating power RF components with TiN
Author(s) -
M. Kuchnir,
E. Hahn
Publication year - 1995
Language(s) - English
Resource type - Reports
DOI - 10.2172/61161
Subject(s) - tin , materials science , coating , fermilab , thin film , rf power amplifier , titanium , memorandum , optoelectronics , electrical engineering , engineering physics , metallurgy , composite material , engineering , nanotechnology , nuclear physics , physics , amplifier , cmos , archaeology , history
A facility for coating RF power components with thin films of Ti and/or TiN has been in operation for some time at Fermilab supporting the Accelerator Division RF development work and the TESLA program. It has been experimentally verified that such coatings improve the performance of these components as far as withstanding higher electric fields. This is attributed to a reduction in the secondary electron emission coefficient of the surfaces when coated with a thin film containing titanium. The purpose of this Technical Memorandum is to describe the facility and the procedure used