z-logo
open-access-imgOpen Access
The rate-limiting mechanism of transition metal gettering in multicrystalline silicon
Author(s) -
Scott A. McHugo,
Alison Thompson,
Mitsuru Imaizumi
Publication year - 1997
Language(s) - English
Resource type - Reports
DOI - 10.2172/603698
Subject(s) - getter , materials science , silicon , carrier lifetime , solar cell , recombination , diffusion , impurity , monocrystalline silicon , energy conversion efficiency , crystalline silicon , optoelectronics , chemistry , biochemistry , physics , organic chemistry , gene , thermodynamics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom