EBIC/TEM investigations of process-induced defects in EFG silicon ribbon | Zendy

B. Cunningham | Zendy; D. G. Ast | Zendy

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EBIC/TEM investigations of process-induced defects in EFG silicon ribbon

Author(s) -

B. Cunningham,

D. G. Ast

Publication year - 1981

Language(s) - English

Resource type - Reports

DOI - 10.2172/5748434

Subject(s) - ribbon , dislocation , materials science , impurity , crystallography , silicon , grain boundary , crystal (programming language) , precipitation , condensed matter physics , mineralogy , composite material , optoelectronics , microstructure , chemistry , physics , computer science , programming language , organic chemistry , meteorology

EBIC and STEM observations on unprocessed and processed EFG ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found: (1) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and (2) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.

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