Open AccessMagnetoresistance and cyclotron mass in extremely-coupled double quantum wells under in-plane magnetic fields
Author(s) -
M. A. Blount,
J. A. Simmons,
S. K. Lyo,
N.E. Harff,
M.V. Weckwerth
Publication year - 1997
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/554859
Subject(s) - condensed matter physics , cyclotron , magnetoresistance , antisymmetric relation , effective mass (spring–mass system) , physics , fermi energy , quantum well , fermi surface , plane (geometry) , quantum oscillations , coupling (piping) , fermi level , magnetic field , electronic band structure , atomic physics , materials science , quantum mechanics , electron , superconductivity , laser , geometry , mathematics , metallurgy , mathematical physics
The authors experimentally investigate the transport properties of an extremely-coupled AlGaAs/GaAs double quantum well, subject to in-plane magnetic fields (B{sub {parallel}}). The coupling of the double quantum well is sufficiently strong that the symmetric-antisymmetric energy gap ({Delta}{sub SAS}) is larger than the Fermi energy (E{sub F}). Thus for all B{sub {parallel}} only the lower energy branch of the dispersion curve is occupied. In contrast to systems with weaker coupling such that {Delta}{sub SAS} < E{sub F} the authors find: (1) only a single feature, a maximum, in the in-plane magnetoresistance, (2) a monotonic increase with B{sub {parallel}} in the cyclotron mass up to 2.2 times the bulk GaAs mass, and (3) an increasing Fermi surface orbit area with B{sub {parallel}}, in good agreement with theoretical predictions
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