Open AccessTop-surface imaging resists for lithography with strongly attenuated radiation
Author(s) -
A. K. Raychaudhuri,
Glenn D. Kubiak,
Craig C. Henderson,
Donald C. Wheeler,
Tim P. Pollagi
Publication year - 1997
Language(s) - English
Resource type - Reports
DOI - 10.2172/554821
Subject(s) - resist , extreme ultraviolet lithography , extreme ultraviolet , lithography , materials science , critical dimension , photolithography , bilayer , optics , optoelectronics , radiation , next generation lithography , process window , ultraviolet radiation , surface roughness , nanotechnology , layer (electronics) , electron beam lithography , laser , chemistry , physics , composite material , biochemistry , membrane , radiochemistry
Strong resist photoabsorption at wavelengths below 248 nm necessitates the use of a thin layer imaging (TLI) scheme for microlithography using 193 nm, 157 nm, or 13.4 nm radiation. Previous to this work, a TLI process commonly known as silylated top surface imaging (TSI) was developed by a Sandia/AT and T team for use in extreme ultraviolet lithography (EUVL) at 13.4 nm. Using this bilayer process, 0.13 {micro}m resolution with 87{degree} sidewalls in 0.7 {micro}m of resist was achieved for EUV exposures. New imaging layer polymers, silylation reagents and crosslinkers, and process conditions were screened for improvement in this TSI process with the ultimate goal of demonstrating a resist technology capable of 0.10 {micro}m critical dimension (CD). The results of these attempted improvements to the TSI process are described in this report