Open AccessDevelopment of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979
Author(s) -
J. R. McCormick,
A. Arvidson,
F. Plahutnik,
D. Sawyer,
Kenneth G. Sharp
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5491926
Subject(s) - dichlorosilane , trichlorosilane , chemical vapor deposition , polycrystalline silicon , process engineering , materials science , silicon , nanotechnology , engineering , optoelectronics , layer (electronics) , thin film transistor
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