Open AccessIon implantation of boron in germanium
Author(s) -
K. S. Jones
Publication year - 1985
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5425716
Subject(s) - acceptor , ion implantation , boron , annealing (glass) , germanium , analytical chemistry (journal) , materials science , ion , vacancy defect , crystallographic defect , deep level transient spectroscopy , silicon , irradiation , radiochemistry , atomic physics , crystallography , chemistry , optoelectronics , metallurgy , physics , nuclear physics , condensed matter physics , organic chemistry , chromatography
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