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ICP dry etching of III-V nitrides
Author(s) -
C.B. Vartuli,
J.W. Lee,
J.D. MacKenzie
Publication year - 1997
Language(s) - English
Resource type - Reports
DOI - 10.2172/541909
Subject(s) - dry etching , nitride , etching (microfabrication) , materials science , environmental science , nanotechnology , layer (electronics)
Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH{sub 4}/H{sub 2}/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH{sub 4} based chemistries. The etch rates increased with increasing dc bias. At low rf power (150 W), the etch rates increased with increasing ICP power, while at 350 W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were {le} 6 for InN over GaN, AlN, InGaN and InAlN under all conditions

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