Open AccessDevelopment of a polysilicon process based on chemical vapor deposition. Phase 1. Second quarterly progress report, January 1-March 31, 1980
Author(s) -
Kenneth G. Sharp,
A. Arvidson,
F. Plahutnik,
D. Sawyer
Publication year - 1980
Language(s) - English
Resource type - Reports
DOI - 10.2172/5416431
Subject(s) - dichlorosilane , polycrystalline silicon , silicon , chemical vapor deposition , trichlorosilane , deposition (geology) , materials science , chemistry , nanotechnology , optoelectronics , geology , paleontology , layer (electronics) , sediment , thin film transistor
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