Open AccessCharacterization of grain boundaries in silicon
Author(s) -
L. J. Cheng,
C. M. Shyu,
Katherine M. Stika,
G. T. Crotty
Publication year - 1983
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5391665
Subject(s) - grain boundary , dangling bond , grain boundary diffusion coefficient , condensed matter physics , materials science , polycrystalline silicon , effective diffusion coefficient , diffusion , silicon , photoconductivity , crystallite , molecular physics , chemical physics , chemistry , nanotechnology , optoelectronics , thermodynamics , physics , microstructure , metallurgy , medicine , layer (electronics) , magnetic resonance imaging , radiology , thin film transistor
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