Open AccessProcess Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983
Author(s) -
J. Čulík
Publication year - 1984
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5192174
Subject(s) - polycrystalline silicon , grain boundary , open circuit voltage , materials science , monocrystalline silicon , silicon , passivation , carrier lifetime , crystallite , short circuit , solar cell , diffusion , optoelectronics , voltage , nanotechnology , electrical engineering , composite material , metallurgy , microstructure , engineering , layer (electronics) , physics , thin film transistor , thermodynamics
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