Open AccessVacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, 1 April-30 June 1980
Author(s) -
Charles Feldman,
C. H. Arrington III,
N. A. Blum,
F. G. Satkiewicz
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/5167400
Subject(s) - materials science , silicon , polycrystalline silicon , vacuum deposition , crystallite , ultra high vacuum , epitaxy , impurity , layer (electronics) , deposition (geology) , sapphire , optoelectronics , solar cell , analytical chemistry (journal) , nanotechnology , metallurgy , optics , chemistry , paleontology , laser , physics , organic chemistry , sediment , biology , thin film transistor , chromatography
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