Open AccessProgress report on GaP, grown junction, high temperature diodes
Author(s) -
R.J. Chaffin
Publication year - 1980
Language(s) - English
Resource type - Reports
DOI - 10.2172/5135533
Subject(s) - gallium phosphide , diode , fabrication , optoelectronics , materials science , engineering physics , phosphide , junction temperature , engineering , physics , metallurgy , medicine , nickel , power (physics) , alternative medicine , pathology , quantum mechanics