z-logo
open-access-imgOpen Access
Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems
Author(s) -
D. J. Peterman
Publication year - 1980
Language(s) - English
Resource type - Reports
DOI - 10.2172/5068113
Subject(s) - hydride , electronic band structure , band gap , octahedron , lattice (music) , chemistry , fermi level , semiconductor , spectral line , electronic structure , condensed matter physics , atomic physics , hydrogen , materials science , crystallography , crystal structure , physics , computational chemistry , optoelectronics , organic chemistry , quantum mechanics , astronomy , acoustics , electron
Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH/sub 2/ and YH/sub 2/ were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH/sub 2/ cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 < x < 2.9 are presented which, as expected, indicate a more premature occupation of the octahedral sites in the larger LaH/sub 2/ lattice. These experimental results also suggest that,more » in contrast to recent calculations, LaH/sub 3/ is a small-band-gap semiconductor.« less

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom