Open AccessHigh-temperature reverse bias and power burn-in at transistor junction temperatures from 150 to 300/sup 0/C. [Identification of potential failures]
Author(s) -
J. P. Gracey
Publication year - 1974
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5064578
Subject(s) - heterojunction bipolar transistor , burn in , atmospheric temperature range , reverse bias , materials science , common emitter , junction temperature , transistor , optoelectronics , analytical chemistry (journal) , leakage (economics) , electrical engineering , bipolar junction transistor , power (physics) , chemistry , physics , voltage , thermodynamics , engineering , macroeconomics , diode , chromatography , economics
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