Active devices for high temperature microcircuitry. [Silicon and gallium arsenide devices]
Author(s) -
D.W. Palmer,
B.L. Draper,
J. D. McBrayer,
K. White
Publication year - 1978
Language(s) - English
Resource type - Reports
DOI - 10.2172/5026891
Subject(s) - gallium arsenide , silicon , optoelectronics , materials science , gallium , computer science , metallurgy
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