Precision manufacturing using advanced optical interference lithography. Final report | Zendy

Jerald A. Britten | Zendy; A. M. Hawryluk | Zendy

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Precision manufacturing using advanced optical interference lithography. Final report

Author(s) -

Jerald A. Britten,

A. M. Hawryluk

Publication year - 1997

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/491960

Subject(s) - dram , lithography , common emitter , interference (communication) , process (computing) , interference lithography , computer science , materials science , dynamic random access memory , optoelectronics , computer hardware , telecommunications , fabrication , medicine , channel (broadcasting) , alternative medicine , semiconductor memory , pathology , operating system

Goal was to develop interference lithography (IL) as a reliable process for patterning large-area, deep-submicron scale field emission arrays for field emission display (FED) applications. We have developed a system based on IL which can easily produce an array of 0.2-0.5 micron emitters over large area (up to 400 sq. in. to date) with better than 5% height and spacing uniformity. Process development as a result of this LDRD project represents a significant advance over the current state of the art for FED manufacturing and is applicable to all types of FEDs, independent of the emitter material. Ability of IL to pattern such structures simultaneously and uniformly on a large format has application to other technology areas, such as dynamic random access memory (DRAM) production and magnetic media recording

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