Open AccessPatterning of GaN in high-density Cl{sub 2}- and BCl{sub 3}-based plasmas
Author(s) -
R. J. Shul,
Ronald D. Briggs,
Han Jia,
S.J. Pearton,
J.W. Lee,
C. B. Vartuli,
Kevin Killeen,
M. J. Ludowise
Publication year - 1997
Language(s) - English
Resource type - Reports
DOI - 10.2172/474932
Subject(s) - plasma , etching (microfabrication) , materials science , plasma etching , nitride , fabrication , optoelectronics , reactive ion etching , semiconductor , analytical chemistry (journal) , nanotechnology , chemistry , layer (electronics) , physics , medicine , alternative medicine , quantum mechanics , pathology , chromatography
Fabrication of group-III nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropic profiles, smooth surface morphologies, etch rates often exceeding 1 {micro}m/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as {approximately}1.3 {micro}m/min have been reported in ECR generated ICl plasmas at {minus}150 V dc-bias. In this study, the authors report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl{sub 2}- and BCl{sub 3}-based plasma chemistries