Open AccessSurface threshold displacement energy measurement of silicon
Author(s) -
J.J. Barnes
Publication year - 1972
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4644463
Subject(s) - silicon , materials science , ion , auger , auger electron spectroscopy , ion beam , analytical chemistry (journal) , degradation (telecommunications) , displacement (psychology) , atomic physics , chemistry , optoelectronics , nuclear physics , electronic engineering , physics , psychology , engineering , psychotherapist , organic chemistry , chromatography
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