Open AccessSOME RADIATION-EFFECTS MEASUREMENTS ON INSULATED-GATE TRANSISTORS
Author(s) -
J.B. McCaslin,
J R Carlyle
Publication year - 1965
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4546140
Subject(s) - irradiation , annealing (glass) , threshold voltage , transistor , optoelectronics , radiation , materials science , electrical engineering , voltage , optics , physics , composite material , engineering , nuclear physics
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