Open AccessMicrostructure of compositionally modulated InAlAs
Author(s) -
R. D. Twesten,
J. Mirecki Millunchick,
S. R. Lee,
D.M. Follstaedt,
E. D. Jones,
S.P. Ahrenkiel,
Yong Zhang,
A. Mascarenhas
Publication year - 1996
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/453541
Subject(s) - photoluminescence , superlattice , reciprocal lattice , materials science , transmission electron microscopy , microstructure , modulation (music) , wavelength , optoelectronics , spectroscopy , optics , crystallography , chemistry , diffraction , nanotechnology , composite material , physics , quantum mechanics , acoustics
The authors have observed spontaneous, lateral composition modulation in tensile InAlAs alloy films grown as short-period superlattices on InP (001). They have analyzed these films using transmission electron microscopy, x-ray reciprocal space mapping, and polarized photoluminescence spectroscopy. They find the growth front is nonplanar, exhibiting {approximately} 2 nm deep cusps aligned with the In-rich regions of the compositionally modulated films. In addition to the measured 15 nm wavelength modulation in the [110] direction, a modulation of 30 nm wavelength is seen in the orthogonal [1{bar 1}0] direction. The photoluminescence from the modulated layer is strongly polarized and red shifted by 0.22 eV
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