Open AccessStudy of bulk damage in high resistivity silicon detectors irradiated by high dose of {sup 60}Co {gamma}-radiation
Author(s) -
Z Li,
C J Li
Publication year - 1996
Language(s) - English
Resource type - Reports
DOI - 10.2172/441759
Subject(s) - irradiation , annealing (glass) , silicon , radiation damage , gamma ray , dosimeter , materials science , radiochemistry , radiation , ionizing radiation , analytical chemistry (journal) , deep level transient spectroscopy , neutron , optoelectronics , chemistry , nuclear physics , physics , chromatography , composite material
High dose (> 200 Mrad) {gamma}-radiation induced displacement damage (or bulk damage) in high resistivity (6--10 k{Omega}-cm) silicon detectors has been studied. It has been found that detector bulk leakage current increases with {gamma} dose at a rate of 3.3 {times} 10{sup {minus}7} A/cm{sup 3}/Mrad. This introduction rate of bulk leakage current makes the introduction of generation centers by 210 Mrad of {gamma}-radiation comparable to that by 1 {times} 10{sup 12} n/cm{sup 2} of neutron radiation. Significant carrier removal (or donor removal), about 100%, was found in detectors irradiated to 215 Mrad. Space charge sign inversion (SCSI) (or type inversion) was observed in detectors irradiated to {ge} 215 Mrad using transient current technique (TCT). As many as seven deep levels have been observed by current deep level transient spectroscopy (I-DLTS). There was little or no annealing (or reverse annealing) for detectors irradiated to 215 Mrad. Some annealing for detectors irradiated to 500 Mrad have been observed