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ELECTRICAL PROPERTIES OF THIN METALLIC FILMS
Author(s) -
D. B. Barker,
Wallace C. Caldwell
Publication year - 1952
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4389662
Subject(s) - materials science , metal , nanotechnology , metallurgy
The Hall coefficient and conductivity of silver films were measured by a DC method and comparisons with the theoretical calculations of Fuchs and Sondheimer were made. Films from 150 A. to 1500 A. in thickness were deposited by evaporation at pressures below 10^-2 microns. The electrical properties were studied at liquid nitrogen, dry ice and acetone, and room temperatures. Film thickness measurements were made by the interferometer method. Electron diffraction and electron micrograph pictures were taken to study agregation and to check on the purity of the films. The electron micrographs show aggregation in films less than 300 A. thick. The electrical measurements also indicate this change in the thinnest films. A variation of Hall coefficient and conductivity with thickness was found but only qualitative agreement between theory and experiment was indicated.

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