Energy dependence of Ge amorphization by Ne, Ar or Kr ion irradiation

Ge has been irradiated at RT by Ne, Ar, or Kr ions of different energies, and the doses required for complete amorphization determined by in situ TEM and electron diffraction. Onset of amorphization was detected after the lowest ion doses reflecting amorphization by individual ions. The ion dose required for complete amorphization increased nearly linearly with ion energy over the range 0.5 to 3.5 MeV for all ions. Amorphization cross sections have been determined for all ions and energies used. The displacements per atom required for complete amorphization decreased with ion energy or mass, owing to decrease in radiation annealing of amorphous volumes as a result of a decrease in fraction of low energy transfers to Ge atoms. Increasing the relative fraction low energy transfers to Ge atoms by simultaneous 1 MeV electron irradiation increased the Kr ion dose required for complete amorphization by as much as a factor of 2.5. The effect is believed to be due to an increase in the fraction of freely migrating defects produced by low energy transfers to Ge atoms