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Thermal conductivity of high purity vanadium
Author(s) -
Wayne Douglas Jung
Publication year - 1975
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4142048
Subject(s) - seebeck coefficient , electrical resistivity and conductivity , vanadium , materials science , thermal conductivity , atmospheric temperature range , temperature coefficient , condensed matter physics , scattering , impurity , thermoelectric effect , analytical chemistry (journal) , thermoelectric materials , phonon scattering , chemistry , thermodynamics , metallurgy , optics , physics , composite material , organic chemistry , chromatography , quantum mechanics
The thermal conductivity, Seebeck coefficient, and electrical resistivity of four high purity vanadium samples have been measured as functions of temperature over the temperature range 5 to 300$sup 0$K. The highest purity sample had a resistance ratio (rho/sub 273$sup 0$K//rho /sub 4.2$sup 0$K/) of 1524. The highest purity sample had a thermal conductivity maximum of 920 W/mK at 9$sup 0$K and had a thermal conductivity of 35 W/mK at room temperature. At low temperatures the thermal resistivity was limited by the scattering of electrons by impurities and phonons. The thermal resistivity of vanadium departed from Matthiessen's rule at low temperatures. The electrical resistivity and Seebeck coefficient of high purity vanadium showed no anomalous behavior above 130$sup 0$K. The intrinsic electrical resistivity at low temperatures was due primarily to interband scattering of electrons. The Seebeck coefficient was positive from 10 to 240$sup 0$K and had a maximum which was dependent upon sample purity. (auth

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