Open AccessELECTRON IRRADIATION EFFECTS IN SILICON AT LIQUID HELIUM TEMPERATURES USING AC HOPPING CONDUCTIVITY.
Author(s) -
R.E. McKeighen,
J. S. Koehler
Publication year - 1970
Language(s) - English
Resource type - Reports
DOI - 10.2172/4107136
Subject(s) - vacancy defect , dopant , silicon , irradiation , impurity , electron beam processing , materials science , annealing (glass) , germanium , activation energy , acceptor , analytical chemistry (journal) , helium , doping , atomic physics , crystallography , chemistry , condensed matter physics , metallurgy , nuclear physics , optoelectronics , physics , organic chemistry , chromatography
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