Long term instability in the defect assembly in irradiated high resistivity silicon detectors | Zendy

В. А. Еремин | Zendy; A. Ivanov | Zendy; E. Verbitskaya | Zendy; Z. Li | Zendy; B. Schmidt | Zendy

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Long term instability in the defect assembly in irradiated high resistivity silicon detectors

Author(s) -

В. А. Еремин,

A. Ivanov,

E. Verbitskaya,

Z. Li,

B. Schmidt

Publication year - 1996

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/390406

Subject(s) - silicon , annealing (glass) , irradiation , electrical resistivity and conductivity , materials science , oxygen , instability , carbon fibers , crystallographic defect , analytical chemistry (journal) , detector , semiconductor detector , radiochemistry , atomic physics , crystallography , chemistry , optoelectronics , physics , nuclear physics , optics , metallurgy , composite material , organic chemistry , chromatography , quantum mechanics , composite number , mechanics

Different kinetic behavior has been revealed for the two types of irradiated high resistivity silicon detectors in the reactions of the interstitial carbon (C{sub i}) annealing and the formation of the C{sub i}-O{sub i} complex. In the detectors with an increased oxygen contents prolonged growth of the C{sub i}-O{sub i} complex concentration obeyed the second order reaction due to an additional source of C{sub i} atoms which were not detected by DLTS measurements. Transformation of carbon related defects has been analyzed concerning the long term instability of irradiated silicon detectors. 5 refs., 2 figs

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