Open AccessAutomation, Control and Modeling of Compound Semiconductor Thin-Film Growth
Author(s) -
W.G. Breiland,
Michael E. Coltrin,
T. J. Drummond,
Kurt Horn,
HongWei Hou,
J. F. Klem,
Jacob Tsao
Publication year - 1999
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/3559
Subject(s) - metalorganic vapour phase epitaxy , microelectronics , automation , epitaxy , heterojunction , compound semiconductor , chemical vapor deposition , materials science , modular design , process (computing) , semiconductor , process control , nanotechnology , optoelectronics , computer science , engineering , mechanical engineering , layer (electronics) , operating system
This report documents the results of a laboratory-directed research and development (LDRD) project on control and agile manufacturing in the critical metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) materials growth processes essential to high-speed microelectronics and optoelectronic components. This effort is founded on a modular and configurable process automation system that serves as a backbone allowing integration of process-specific models and sensors. We have developed and integrated MOCVD- and MBE-specific models in this system, and demonstrated the effectiveness of sensor-based feedback control in improving the accuracy and reproducibility of semiconductor heterostructures. In addition, within this framework we have constructed ''virtual reactor'' models for growth processes, with the goal of greatly shortening the epitaxial growth process development cycle
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