Open AccessGaInAsSb materials for thermophotovoltaics
Author(s) -
C.A. Wang,
G.W. Turner,
M.J. Manfra,
H.K. Choi,
D. L. Spears
Publication year - 1996
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/350930
Subject(s) - thermophotovoltaic , photoluminescence , full width at half maximum , epitaxy , molecular beam epitaxy , materials science , doping , analytical chemistry (journal) , optoelectronics , crystallography , chemistry , nanotechnology , common emitter , layer (electronics) , chromatography
Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup 15} cm{sup {minus}3} and hole mobility {approximately}450 to 580 cm{sup 2}/V-s for OMVPE-grown layers, p- and n-type doping is reported for layers grown with either technique. The ideality factor of diode structures is {approximately}2 for both techniques
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