Atomistic studies of jogged screw dislocations in {gamma}-TiAl alloys | Zendy

K.Y. Chen | Zendy; Martin L. Dunn | Zendy; S.J. Zhou | Zendy

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Atomistic studies of jogged screw dislocations in {gamma}-TiAl alloys

Author(s) -

K.Y. Chen,

Martin L. Dunn,

S.J. Zhou

Publication year - 1999

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/329543

Subject(s) - dislocation , materials science , condensed matter physics , dipole , crystallography , partial dislocations , plane (geometry) , geometry , physics , chemistry , mathematics , quantum mechanics

The behavior of jogged screw dislocations in {gamma}-TiAl alloys has been investigated with large-scale molecular dynamics (MD) simulations. The authors find a new mechanism for formation of pinning points in jogged screw dislocations. They also find that the critical height for the jogs in the {+-}[{bar 1}10] directions on the (001) plane to move nonconservatively is between 3r{sub 0} and 4r{sub 0}, where r{sub 0} is the nearest neighbor distance of aluminum atoms. Interstitials and vacancies are created during the nonconservative motions of the jogs. In addition, the formation of dislocation dipole and loops around the jogs is also observed

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