OMVPE growth of GaInAsSb in the 2 to 2.4 {micro}m range

Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy using all organometallic precursors, which include triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. Layers were grown over a temperature range between 525 and 575 C, a V/III ratio range between 0.9 and 1.7, x < 0.2 and y < 0.2, and on (100) GaSb substrates with 2{degree} toward (100) or 6{degree} toward (111)B. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, and substrate misorientation. A mirror-like surface morphology and room temperature photoluminescence (PL) could be obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.4 {micro}m. Based on epilayer surface morphology and low temperature PL spectra, the crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited smoother surfaces and narrower full width at half-maximum values of 4 K PL spectra than layers grown on the more standard substrate 9100 2{degree} toward (110). Nominally undoped GaInAsSb layers grown at 550 C are p-type with 300 K hole concentration of {approximately} 5 {times} 10{sup 15} cm{sup {minus}3} and hole mobility of {approximately} 430 to 560 cm{sup 2}/V-s. The n- and p-type doping of GaInAsSb with diethyltellurium and dimethylzinc, respectively, are also reported