Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb | Zendy

Pradip Dutta | Zendy; A.G. Ostrogorsky | Zendy; R.J. Gutmann | Zendy

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Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb

Author(s) -

Pradip Dutta,

A.G. Ostrogorsky,

R.J. Gutmann

Publication year - 1997

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/319839

Subject(s) - thermophotovoltaic , materials science , halide , baffle , homogeneous , alkali metal , optoelectronics , melting temperature , gallium antimonide , crystal growth , crystallography , thermodynamics , composite material , chemistry , superlattice , inorganic chemistry , common emitter , physics , organic chemistry

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality

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