Open AccessUltrasonic characterization of microwave joined silicon carbide/silicon carbide
Author(s) -
M.B. House,
Paul S. Day
Publication year - 1997
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/319834
Subject(s) - silicon carbide , materials science , microwave , temperature cycling , ultrasonic sensor , waveform , fabrication , silicon , nondestructive testing , composite material , ultrasonic testing , thermal , carbide , optoelectronics , acoustics , electrical engineering , computer science , engineering , medicine , telecommunications , physics , alternative medicine , pathology , voltage , meteorology , radiology
High frequency (50--150 MHz), ultrasonic immersion testing has been used to characterize the surface and interfacial joint conditions of microwave bonded, monolithic silicon carbide (SiC) materials. The high resolution ultrasonic C-scan images point to damage accumulation after thermal cycling. Image processing was used to study the effects of the thermal cycling on waveform shape, amplitude and distribution. Such information is useful for concurrently engineering material fabrication processes and suitable nondestructive test procedures
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