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Modeling of InGaSb thermophotovoltaic cells and materials
Author(s) -
M. Zierak,
J.M. Borrego,
I. Bhat,
R.J. Gutmann,
G.W. Charache
Publication year - 1997
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/319651
Subject(s) - thermophotovoltaic , absorption (acoustics) , band gap , optoelectronics , refractive index , materials science , refraction , electron , optics , physics , common emitter , quantum mechanics
A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys

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