Open AccessSilicon as the P-type dopant in GaSb and Ga{sub 0.8}In{sub 0.2}Sb grown by metalorganic vapor phase epitaxy
Author(s) -
H. Ehsani,
Ishwara B. Bhat,
C. Gutmann Hitchcock,
G.W. Charache,
Mark O. Freeman
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/307975
Subject(s) - metalorganic vapour phase epitaxy , epitaxy , dopant , materials science , secondary ion mass spectrometry , doping , vapor phase , silicon , analytical chemistry (journal) , silane , secondary ion mass spectroscopy , optoelectronics , chemistry , ion , layer (electronics) , nanotechnology , physics , composite material , organic chemistry , thermodynamics , chromatography
P-type GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane as the doping precursor. Hall measurements show that the concentration and mobility of holes in GaSb and Ga{sub 0.8}In{sub 0.2}Sb are higher when the layers are grown on GaSb substrates than when grown on GaAs substrates. Secondary ion mass spectroscopy (SIMS) results show that the incorporation of Si is higher when GaSb substrates are used. The compensation of Si acceptors is negligible in GaSb, but is as high as 25% in Ga{sub 0.8}In{sub 0.2}Sb