Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices | Zendy

W. Nishikawa | Zendy; David Joslin | Zendy; D.D. Krut | Zendy; J. Eldredge | Zendy; Motoko Takahashi | Zendy; Michael A. Haddad | Zendy; N.H. Karam | Zendy; A. Narayanan | Zendy; M. M. AlJassim | Zendy

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Fabrication and electrical characterization of 0.55 eV n-on-p InGaAs thermophotovoltaic devices

Author(s) -

W. Nishikawa,

David Joslin,

D.D. Krut,

J. Eldredge,

Motoko Takahashi,

Michael A. Haddad,

N.H. Karam,

A. Narayanan,

M. M. AlJassim

Publication year - 1998

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/307868

Subject(s) - thermophotovoltaic , fabrication , characterization (materials science) , optoelectronics , materials science , lattice (music) , gallium arsenide , indium gallium arsenide , nanotechnology , physics , common emitter , medicine , alternative medicine , pathology , acoustics

Results are presented on the characterization and testing of lattice mismatched 0.55 eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. The authors also report on the effect of lattice matched InAsP and InAlAs back surface field on the performance of the TPV cells

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