InGaAs monolithic interconnected modules (MIM)

Four major components of a thermophotovoltaic (TPV) energy conversion system are a heat source, a graybody or a selective emitter, spectrum shaping elements such as filters, and photovoltaic (PV) cells. One approach to achieving a high voltage/low current configuration is to fabricate a device, where small area PV cells are monolithically series connected. The authors have termed this device a monolithic interconnected module (MIM). A MIM device has other advantages over conventional one-junction cells, such as simplified array interconnections and heat-sinking, and radiation recycling capability via a back surface reflector (BSR). The authors confine the contents of this article to the MIM materials, process development, and some optical results. The successful fabrication of InGaAs/InP MIM devices entails the development and optimization of several key components and processes. These include: isolation trench via geometry, selective chemical etching, contact and interconnect metallization, dielectric isolation barrier, back surface reflector (BSR), and anti-reflection (AR) coating. The selection, development, and testing of the materials and processes described above for MIM fabrication will be described