Open AccessIrradiation study on GEM IPC preamp/shaper
Author(s) -
A. Kandasamy
Publication year - 1995
Language(s) - English
Resource type - Reports
DOI - 10.2172/28413
Subject(s) - preamplifier , integrated circuit , electrical engineering , electronics , memorandum , electronic circuit , optoelectronics , voltage , high voltage , materials science , computer science , engineering , electronic engineering , amplifier , archaeology , cmos , history
The Preamplifier/Shaper Integrated Circuit for the GEM Interpolating Pad Chamber (IPC), designed by Paul. O`Connor, Brookhaven National Laboratory is for amplifying the charge signal from the Pad cathodes into a voltage pulse which goes to the Analog Random Access Memory (ARAM) integrated circuit. The GEM IPC integrated circuit has a SemiGaussian voltage pulse output with a 30ns shaping time. The integrated circuits were fabricated using Harris Semiconductors AVLSI1-RA process in-order for the electronics on the wafer to survive up to 2 mad of ionizing radiation during its operation life time. The details of the electronics on the GEM IPC integrated circuits is explained in the design memorandum by Paul. O`Connor. The purpose of this study is to determine the ability of the electronics on this IC fabricated using the above process to withstand ionizing radiation up to the above mentioned dose level